What is 3D V-NAND and how does it differ from existing technology?
Samsung's unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today's conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utilising a smaller footprint.
Optimise daily computing with TurboWrite technology for unrivalled read/write speeds
Achieve the ultimate read/write performance to maximise your everyday computing experience with Samsung's TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO* but up to 1.9x faster random write speeds for 120/250 GB models** as well. The 850EVO delivers the top of its class performance in sequential read (540MB/s) and write (520MB/s) speeds. Plus, you also gain optimised random performance in all QD for client PC usage scenario.
*PCmark7 (250GB ) : 6,700 (840 EVO) > 7,600 (850 EVO)
**Random Write(QD32, 120GB) : 36,000 IOPS(840 EVO) > 88,000 IOPS(850 EVO)
Get into the fast lane with the improved RAPID mode
Samsung's Magician software which provides Rapid Mode for 2x faster processing data speeds* on a system level by utilising unused PC memory (DRAM) as cache storage. The newest Magician increased the maximum memory usage in Rapid mode from 1 GB, in the previous 840 EVO version, to up to 4 GB with the 850 EVO when implementing 16 GB of DRAM. You also get a 2x performance* boost in all random Queue depth.
*PCMARK7 RAW(250GB) : 7,500 > 15,000(Rapid mode)
Guaranteed endurance and reliability bolstered by 3D V-NAND technology
The 850 EVO delivers guaranteed endurance and reliability by doubling the TBW* compared to the previous generation 840 EVO** backed by an industry leading 5 year warranty. The 850 EVO through minimised performance degradation allows sustained performance improvements of up to 30% over the 840 EVO proving to be one of the most dependable storage devices***.
*TBW : Total Bytes Written
**TBW : 43 (840 EVO) > 75 (850 EVO 120/250GB),150 (850 EVO 500/1TB)
***Sustained Performance (250GB) : 3,300 IOPS (840 EVO) > 6,500 IOPS(850 EVO), Performance measured after 12 hours "Random Write" test
Compute longer with improved energy efficiency backed by 3D V-NAND
The 850 EVO delivers significantly longer battery life on your notebook with a controller optimised for 3D V-NAND now enabling Device Sleep at a highly efficient 2mW. The 850 EVO is now 25% more power efficient to the 840 EVO during write operations* thanks to 3D V-NAND only consuming half the energy than that of Planar 2D NAND.
*Power (250GB) : 3.2 Watt (840 EVO) > 2.4 Watt (850 EVO)
Client PCs Capacity
500 GB (1 GB = 1 Billionbyte by IDEMA) Form Factor
6.35 cm (2.5) Form Factor Interface
SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface Dimension (WxHxD)
100.00 x 69.85 x 6.80 mm Dimension Weight
Max 45 g Weight Storage Memory
Samsung 32 layer 3D V-NAND Controller
Samsung MGX Controller Cache Memory
Samsung 512 MB Low Power DDR3 SDRAM
TRIM Supported S.M.A.R.T Support
S.M.A.R.T Supported GC (Garbage Collection)
Auto Garbage Collection Algorithm Encryption Support
AES 256 bit Encryption (Class 0) , TCG/Opal, IEEE1667 (Encrypted drive) WWN Support
World Wide Name supported Device Sleep Mode Support
Up to 540 MB/sec Sequential Read Sequential Write
Up to 520 MB/sec Sequential Write Random Read (4KB, QD32)
Up to 98,000 IOPS Random Read Random Write (4KB, QD32)
Up to 90,000 IOPS Random Write Random Read (4KB, QD1)
Up to 10,000 IOPS Random Read Random Write (4KB, QD1)
Up to 40,000 IOPS Random Write
Average Power Consumption (system level)
Average: 3.0 Watts Maximum: 3.5 Watts (Burst mode) Actual power consumption may vary depending on system hardware & configuration Power consumption (Idle)
Max. 50 mWatts Allowable Voltage
5 V ± 5% Allowable voltage Reliability (MTBF)
1.5 Million Hours Reliability (MTBF) Operating Temperature
0 - 70 °C Operating Temperature Shock
1,500 G & 0.5 ms (Half sine)